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Modeling of Electrical Overstress in Integrated Circuits (Hardcover, 1995 ed.)
Loot Price: R4,296
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Modeling of Electrical Overstress in Integrated Circuits (Hardcover, 1995 ed.)
Series: The Springer International Series in Engineering and Computer Science, 289
Expected to ship within 12 - 17 working days
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Electrical overstress (EOS) and Electrostatic discharge (ESD) pose
one of the most dominant threats to integrated circuits (ICs).
These reliability concerns are becoming more serious with the
downward scaling of device feature sizes. Modeling of Electrical
Overstress in Integrated Circuits presents a comprehensive analysis
of EOS/ESD-related failures in I/O protection devices in integrated
circuits. The design of I/O protection circuits has been done in a
hit-or-miss way due to the lack of systematic analysis tools and
concrete design guidelines. In general, the development of on-chip
protection structures is a lengthy expensive iterative process that
involves tester design, fabrication, testing and redesign. When the
technology is changed, the same process has to be repeated almost
entirely. This can be attributed to the lack of efficient CAD tools
capable of simulating the device behavior up to the onset of
failure which is a 3-D electrothermal problem. For these reasons,
it is important to develop and use an adequate measure of the EOS
robustness of integrated circuits in order to address the on-chip
EOS protection issue. Fundamental understanding of the physical
phenomena leading to device failures under ESD/EOS events is needed
for the development of device models and CAD tools that can
efficiently describe the device behavior up to the onset of thermal
failure. Modeling of Electrical Overstress in Integrated Circuits
is for VLSI designers and reliability engineers, particularly those
who are working on the development of EOS/ESD analysis tools. CAD
engineers working on development of circuit level and device level
electrothermal simulators will also benefit from the material
covered. This book will also be of interest to researchers and
first and second year graduate students working in semiconductor
devices and IC reliability fields.
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