This book covers the crucial aspects of theoretical and
experimental approaches for Si-based spintronic materials. The
theory parts emphasize on two first-principles methods - the GW
method to improve the insulating gaps of the half metals which are
a class of materials ideal for spintronic applications, and the
linear response theory to calculate electric and magnetic
susceptibilities. Three growth methods for doping transition metal
elements in alloy and layered forms in Si will be focused on. Also
three methods for characterization will be presented emphasizing on
how to interpret experimental results. Finally, recent progress
made in the Si-based spintronic materials will be discussed. This
book is intended for researchers and graduate students who are
interested in designing and growing new spintronic materials, in
particular, silicon-based.
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