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The Piezojunction Effect in Silicon Integrated Circuits and Sensors (Paperback, Softcover reprint of the original 1st ed. 2002)
Loot Price: R2,839
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The Piezojunction Effect in Silicon Integrated Circuits and Sensors (Paperback, Softcover reprint of the original 1st ed. 2002)
Series: The Springer International Series in Engineering and Computer Science, 682
Expected to ship within 10 - 15 working days
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Mechanical stress affects the magnitude of base-emitter voltages of
forward biased bipolar transistors. This phenomenon is called the
piezojunction effect. The piezojunction effect is the main cause of
inaccuracy and drift in integrated temperature sensors and bandgap
voltage references. The aim of The Piezojunction Effect in Silicon
Integrated Circuits and Sensors is twofold. Firstly, to describe
techniques that can reduce the mechanical-stress-induced inaccuracy
and long-term instability. Secondly, to show, that the
piezojunction effect can be applied for new types of
mechanical-sensor structures. During IC fabrication and packaging
thermo-mechanical stress is induced, when the packaged chips cool
down to the temperature of application. The piezojunction effect is
caused by a stress-induced change in the conductivity of the
minority-charge carriers, while the piezoresistive effect is caused
by a similar effect for the majority-charge carriers. To
characterise the anisotropic piezojunction effect, the authors
performed systematic investigations over wide ranges of mechanical
stress and temperature. The experiments have been performed for
various crystal and stress orientations. The experimental results
have been used to extract the first- and second-order piezojunction
(FOPJ and SOPJ) coefficients for bipolar transistors. It is shown
how the knowledge of the piezojunction and piezoresistive
coefficients can used to minimize the undesirable mechanical-stress
effects on the electrical characteristics of transistors and
resistors, respectively. Devices with lower mechanical-stress
sensitivity can be found by comparing their piezo-coefficients. The
layout of the device can also be optimized to reduce the
mechanical-stress sensitivity. As a next step it is shown, how the
knowledge of the piezo-effects on device level can be used to
predict and to reduce their negative influence on circuit level.
This is demonstrated for a number of important basic circuits,
including translinear circuits, temperature transducers and bandgap
references. Finally, it is shown how the piezojunction effect can
be used to fabricate stress-sensing elements. It appears that, in
comparison with resistive stress-sensing elements, the
piezojunction sensors have the advantage of a smaller size and very
low power dissipation.
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