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Semiconductor Interfaces at the Sub-Nanometer Scale (Hardcover, 1993 ed.)
Loot Price: R5,730
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Semiconductor Interfaces at the Sub-Nanometer Scale (Hardcover, 1993 ed.)
Series: NATO Science Series E:, 243
Expected to ship within 10 - 15 working days
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The Advanced Research Workshop on the Physical Properties of
Semiconductor Interfaces at the Sub-Nanometer Scale was held from
31 August to 2 September, 1992, in Riva del Garda. Italy. The aim
of the workshop was to bring together experts in different aspects
of the study of semiconductor interfaces and in small-scale devices
where the interface properties can be very significant It was our
aim that this would help focus research of the growth and
characterization of semiconductor interfaces at the atomic scale on
the issues that will have the greatest impact on devices of the
future. Some 30 participants from industrial and academic research
institutes and from 11 countries contributed to the workshop with
papers on their recent wode. . 'There was ample time for discussion
after each talk. as well as a summary discussion at the end of the
meeting. The major themes of the meeting are described below. The
meeting included several talks relating to the different growth
techniques used in heteroepitaxial growth of semiconductors.
Horikoshi discussed the atomistic processes involved in MBE, MEE
and MOCVD, presenting results of experimental RHEED and
photoluminescence measurements; Foxon compared the merits of MBE,
MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge
growth by GSMBE, and Pashley discussed the role of surface
reconstructions in MBE growth as seen from STM studies on GaAs. On
the theoretical side, Vvedensky described several different methods
to model growth: molecular dynamics, Monte Carlo techniques, and
analytic modeling.
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