A comprehensive device model considering both spatial distributions
of the terahertz field and the field-effect self-mixing factor has
been constructed for the first time in the thesis. The author has
found that it is the strongly localized terahertz field induced in
a small fraction of the gated electron channel that plays an
important role in the high responsivity. An AlGaN/GaN-based
high-electron-mobility transistor with a 2-micron-sized gate and
integrated dipole antennas has been developed and can offer a
noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further
reducing the gate length down to 0.2 micron, a noise-equivalent
power of 6 pW/Hz1/2 has been achieved. This thesis provides
detailed experimental techniques and device simulation for
revealing the self-mixing mechanism including a scanning probe
technique for evaluating the effectiveness of terahertz antennas.
As such, the thesis could be served as a valuable introduction
towards further development of high-sensitivity field-effect
terahertz detectors for practical applications.
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