Emerging Resistive Switching Memories (Paperback, 1st ed. 2016)

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

General

Imprint:	Springer International Publishing AG
Country of origin:	Switzerland
Series:	SpringerBriefs in Materials
Release date:	July 2016
First published:	2016
Authors:	Jianyong Ouyang
Dimensions:	235 x 155 x 6mm (L x W x T)
Format:	Paperback
Pages:	93
Edition:	1st ed. 2016
ISBN-13:	978-3-319-31570-6
Categories:	Books > Professional & Technical > Technology: general issues > Nanotechnology Books > Computing & IT > Computer hardware & operating systems > Storage media & peripherals Books > Professional & Technical > Mechanical engineering & materials > Materials science > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Circuits & components
LSN:	3-319-31570-6
Barcode:	9783319315706

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