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Rare-Earth Implanted MOS Devices for Silicon Photonics - Microstructural, Electrical and Optoelectronic Properties (Paperback, 2010 ed.)
Loot Price: R3,401
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Rare-Earth Implanted MOS Devices for Silicon Photonics - Microstructural, Electrical and Optoelectronic Properties (Paperback, 2010 ed.)
Series: Springer Series in Materials Science, 142
Expected to ship within 10 - 15 working days
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Wo Licht ist, ist auch Schatten! ("More light, more shadow!" or
simpler: "Nothing is perfect") -Johann Wolfgang von Goethe, from
Got .. z von Berlichingen, Act I There exist already about ten
books (e. g. [1-8]) - not counting the many conf-
enceproceedingsvolumes- onthe
differentaspectsofSi-basedphotonicsincluding also the issue of
silicon-basedlight emission. Why is now anotherone neededabout this
subject, and even more, exclusively about a special type of light
emitters? This book summarizes all aspects of the development of
rare earth (RE) c- taining MOS devices fabricated by ion
implantation as the key technology and critically re ects the
related referencesthroughoutthe different chapters. This work was
mainly done in the course of the last 10 years. Preliminary work
for this goal, undertaken mostly in the nineties, was based on the
introduction of group IV e- ments (Si, Ge, Sn) into the thermally
grown silicon dioxide leading to the highest power ef ciency values
in the blue-violet wavelength range. This success inspired us to
use the REs as means of exploring other wavelength ranges with the
same or even higher power ef ciencies. After an historical
introduction of the REs and silicon-based light emission, Chap. 1
presents a review of electroluminescence from MOS-type light
emitters, based on silicon and its technology. The achievement of
an optimized material for electrically driven light emission, that
is, ef cient emission with reasonable reliability, is only possible
with a deep knowledge of the materials properties det-
miningtheelectro-optical(orphotonic)properties(seeChap. 2).
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