Written by one of the driving forces in the field, The MOCVD
Challenge is a comprehensive review covering GaInAsP InP, GaInAsP
GaAs, and related material for electronic and photonic device
applications. These III-V semiconductor compounds have been used to
realize the electronic, optoelectronic, and quantum devices that
have revolutionized telecommunications. The figure on the back
cover gives the energy gap and lattice parameter for the entire
compositional range of the binary, ternary, and quaternary
combinations of these III-V elements. By understanding the material
and learning to control the growth new devices become possible: the
front cover shows the world s first InP/GaInAs superlattice that
was fabricated by the author this has gone on to be the basis of
modern quantum devices like quantum cascade lasers and quantum dot
infrared photodetectors.
Now in its second edition, this updated and combined volume
contains the secrets of MOCVD growth, material optimization, and
modern device technology. It begins with an introduction to
semiconductor compounds and the MOCVD growth process. It then
discusses in situ and ex situ characterization for MOCVD growth.
Next, the book examines in detail the specifics of the growth of
GaInP(As)-GaAs and GaInAs(P)-InP material systems. It examines
MOCVD growth of various III-V heterojunctions and superlattices and
discusses electronic and optoelectronic devices realized with this
material. Spanning 30 years of research, the book is the definitive
resource on MOCVD.
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