Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals (Hardcover)

This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.

General

Imprint:	World Scientific Europe Ltd
Country of origin:	United Kingdom
Release date:	November 2019
First published:	2020
Authors:	Oleg Velichko
Format:	Hardcover - Cloth over boards
Pages:	404
ISBN-13:	978-1-78634-715-2
Categories:	Books > Science & Mathematics > Physics > Electricity, magnetism & electromagnetism Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors Promotions
LSN:	1-78634-715-6
Barcode:	9781786347152

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