This book describes the technology of charge-trapping non-volatile
memories and their uses. The authors explain the device physics of
each device architecture and provide a concrete description of the
materials involved and the fundamental properties of the
technology. Modern material properties, used as charge-trapping
layers, for new applications are introduced. Provides a
comprehensive overview of the technology for charge-trapping
non-volatile memories; Details new architectures and current
modeling concepts for non-volatile memory devices; Focuses on
conduction through multi-layer gate dielectrics stacks.
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