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High-k Gate Dielectric Materials - Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) (Paperback)
Loot Price: R2,540
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High-k Gate Dielectric Materials - Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) (Paperback)
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This volume explores and addresses the challenges of high-k gate
dielectric materials, one of the major concerns in the evolving
semiconductor industry and the International Technology Roadmap for
Semiconductors (ITRS). The application of high-k gate dielectric
materials is a promising strategy that allows further
miniaturization of microelectronic components. This book presents a
broad review of SiO2 materials, including a brief historical note
of Moore's law, followed by reliability issues of the SiO2 based
MOS transistor. It goes on to discuss the transition of gate
dielectrics with an EOT ~ 1 nm and a selection of high-k materials.
A review of the various deposition techniques of different high-k
films is also discussed. High-k dielectrics theories (quantum
tunneling effects and interface engineering theory) and
applications of different novel MOSFET structures, like tunneling
FET, are also covered in this book. The volume also looks at the
important issues in the future of CMOS technology and presents an
analysis of interface charge densities with the high-k material
tantalum pentoxide. The issue of CMOS VLSI technology with the
high-k gate dielectric materials is covered as is the advanced
MOSFET structure, with its working structure and modeling. This
timely volume will prove to be a valuable resource on both the
fundamentals and the successful integration of high-k dielectric
materials in future IC technology.
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