Fowler-Nordheim Field Emission - Effects in Semiconductor Nanostructures (Paperback, 2012 ed.)

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.

General

Imprint:	Springer-Verlag
Country of origin:	Germany
Series:	Springer Series in Solid-State Sciences, 170
Release date:	February 2014
First published:	2012
Authors:	Sitangshu Bhattacharya • Kamakhya Prasad Ghatak
Dimensions:	235 x 155 x 23mm (L x W x T)
Format:	Paperback
Pages:	338
Edition:	2012 ed.
ISBN-13:	978-3-642-44515-6
Categories:	Books > Professional & Technical > Technology: general issues > Nanotechnology Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Microwave technology Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors Promotions
LSN:	3-642-44515-2
Barcode:	9783642445156

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