This book studies the electrical, optical and structural properties
of the Be-oped GaInas/AlGaAs multiple quantum-well structures
(MQWs) at different doping density in the GaInls well, both
designed and fabricated in house. The higher Be-doping density in
the wells was found to enhance the compressive strain and increase
barrier height of the GaInAs/AlGaAs MQWs through extensive optical
characterisation. It caused the shifts of the sub-energy levels in
the valence band of the well material and the absorption wavelength
resulting from the intersubband absorption. These observations were
verified by theoretical calculation based on the six-band
Luttinger-Kohn model by taking the Be-doping into account.
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