Quantum Well Structures for Infrared Photodetection (Paperback)

This book studies the electrical, optical and structural properties of the Be-oped GaInas/AlGaAs multiple quantum-well structures (MQWs) at different doping density in the GaInls well, both designed and fabricated in house. The higher Be-doping density in the wells was found to enhance the compressive strain and increase barrier height of the GaInAs/AlGaAs MQWs through extensive optical characterisation. It caused the shifts of the sub-energy levels in the valence band of the well material and the absorption wavelength resulting from the intersubband absorption. These observations were verified by theoretical calculation based on the six-band Luttinger-Kohn model by taking the Be-doping into account.

General

Imprint:	nova science publishers
Country of origin:	United States
Release date:	March 2011
First published:	August 2010
Authors:	Wei Shi • D. H. Zhang
Dimensions:	155 x 230 x 7mm (L x W x T)
Format:	Paperback
Pages:	77
ISBN-13:	978-1-61668-368-9
Categories:	Books > Professional & Technical > Industrial chemistry & manufacturing technologies > Other manufacturing technologies > Precision instruments manufacture > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Applied optics > Laser technology
LSN:	1-61668-368-6
Barcode:	9781616683689

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