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Highly Integrated Gate Drivers for Si and GaN Power Transistors (Hardcover, 1st ed. 2021)
Loot Price: R2,336
Discovery Miles 23 360
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Highly Integrated Gate Drivers for Si and GaN Power Transistors (Hardcover, 1st ed. 2021)
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This book explores integrated gate drivers with emphasis on new
gallium nitride (GaN) power transistors, which offer fast switching
along with minimum switching losses. It serves as a comprehensive,
all-in-one source for gate driver IC design, written in handbook
style with systematic guidelines. The authors cover the full range
from fundamentals to implementation details including topics like
power stages, various kinds of gate drivers (resonant,
non-resonant, current-source, voltage-source), gate drive schemes,
driver supply, gate loop, gate driver power efficiency and
comparison silicon versus GaN transistors. Solutions are presented
on the system and circuit level for highly integrated gate drivers.
Coverage includes miniaturization by higher integration of
subfunctions onto the IC (buffer capacitors), as well as more
efficient switching by a multi-level approach, which also improves
robustness in case of extremely fast switching transitions. The
discussion also includes a concept for robust operation in the
highly relevant case that the gate driver is placed in distance to
the power transistor. All results are widely applicable to achieve
highly compact, energy efficient, and cost-effective power
electronics solutions.
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