Zinc oxide, ZnO, has been attracting much attention because of its
potential applications in photonic and optoelectronic devices. The
notable properties of ZnO include direct band energy gap (Eg=3.37
eV at RT), large exciton binding energy of 60 meV, and strong
cohesive energy of 1.89 eV. Recent reports on the lasing mechanism
of ZnO have shown that ZnO is a promising photonic material for
exciton devices in the wavelength ranging from blue to ultraviolet.
It is well known that high quality materials are required for
optoelectronic devices. At the current stage the problems in
extending toward ZnO-based device applications are the difficulty
in achieving high crystal quality in either bulk or thin film
dimensions of ZnO, as well as the difficulty in controlling p-type
conductivity. On the other hand, control of the crystalline defects
in naturally n-type ZnO is the critical issue to obtain p-type ZnO.
This book is focused on improving the quality of ZnO films grown by
plasma-assisted molecular beam epitaxy (P-MBE) on c-sapphire with a
MgO buffer layer through optimization of buffer layers and detailed
structural characterization.
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