Semiconductor devices are ubiquitous in the modern computer and
telecommunications industry. A precise knowledge of the transport
equations for electron flow in semiconductors when a voltage is
applied is therefore of paramount importance for further
technological breakthroughs.
In the present work, the author tackles their derivation in a
systematic and rigorous way, depending on certain key parameters
such as the number of free electrons in the device, the mean free
path of the carriers, the device dimensions and the ambient
temperature. Accordingly a hierarchy of models is examined which is
reflected in the structure of the book: first the microscopic and
macroscopic semi-classical approaches followed by their
quantum-mechanical counterparts.
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