An SOI LDMOS For Better Switch Application (Paperback)

This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1- m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1- m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET."

General

Imprint:	Lap Lambert Academic Publishing
Country of origin:	United States
Release date:	June 2013
First published:	June 2013
Authors:	Arindam Biswas • Arzoo Rafique • Anup Kumar Bhattacharjee
Dimensions:	229 x 152 x 5mm (L x W x T)
Format:	Paperback - Trade
Pages:	84
ISBN-13:	978-3-659-40675-1
Categories:	Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > General
LSN:	3-659-40675-9
Barcode:	9783659406751

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