This book is proposed to develop an SOI (Silicon on Insulator)
LDMOS in which a drift region of 1- m is added to a conventional
n-MOS and compare them on various aspects. The drift region
utilizes the RESURF effect that is utilized to distribute the
electric field into the LDD region. It is found using two
dimensional simulations that the addition of a drift region of 1- m
in LDMOS improves the performance of the device in terms of
breakdown-voltage and switching-speed over the conventional
MOSFET."
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