Nowadays,active-matrix addressing using a-Si TFTs is dominating in
the flat panel display markets. However, low temperature
polysilicon has been proposed and considered to be a promising
alternative technology. Metal induced crystallization (MIe is one
of the methods to obtain high quality polysilicon films at low
temperatures. A few technologies are presented in this monograph,
which improve the quality of MIC polysilicon film and hence the
performance of TFTs built on. Amelioration of MIC processes has
been made to produce high performance polysilicon TFTs using
solution based MIC (SMIe and defined-grain MIC (DG-MIe methods.
Novel post-annealing technologies are also introduced to reduce the
micro-defects in MIC polysilicon film and hence to achieve better
performance. These technologies include YAG laser post-annealing
and flash lamp post-annealing. Particularly, it is the first time
to report the application of flash lamp annealing technology in the
fabrication of low temperature polysilicon and TFTs.
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