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Amorphous and Crystalline Silicon Carbide III - and Other Group IV - IV Materials. Proceedings of the 3rd International Conference, Howard University, Washington, D. C., April 11 - 13, 1990 (Paperback, Softcover reprint of the original 1st ed. 1992)
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Amorphous and Crystalline Silicon Carbide III - and Other Group IV - IV Materials. Proceedings of the 3rd International Conference, Howard University, Washington, D. C., April 11 - 13, 1990 (Paperback, Softcover reprint of the original 1st ed. 1992)
Series: Springer Proceedings in Physics, 56
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Total price: R3,005
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This volume contains written versions of the papers presented at
the Third Inter national Conference on Amorphous and Crystalline
Silicon Carbide and Other Group IV-IV Materials (lCACSC 90), which
was held at Howard University, April 11-13, 1990 in Washington, DC.
The ICACSC continued to provide an international forum for
discussion and exchange of ideas regarding the current state of
research aimed at developing silicon carbide devices and circuits
and related materials. ICACSC attracted over one hundred
participants from seven countries. A special session was held in
honor of the eight Soviet scientists who attended the conference.
The substantial increase in the number of papers compared with the
previous year is an indication of the growing interest in this
field. The conference also included a poster session for the first
time. This volume contains 54 refereed contributions grouped into
four parts. Several exciting new results are reported for the first
time here: SiC-based solid-solution growth and technology, the
formation of SiGe heterostructures by ion implantation, 6H-SiC
substrates grown by the sublimation method, expla nation of the
appearance of negative differential resistance in a N+PN-SiC-6H
transistor by the Wannier-Starck effect, the formation of amorphous
SiC/Si het erojunctions by the polymer route, and the prospects of
developing SiC bipolar transistors and thyristors."
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