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Heterostructure Epitaxy and Devices (Paperback, Softcover reprint of the original 1st ed. 1996)
Loot Price: R1,558
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Heterostructure Epitaxy and Devices (Paperback, Softcover reprint of the original 1st ed. 1996)
Series: NATO Science Partnership Subseries: 3, 11
Expected to ship within 10 - 15 working days
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From October 15 to 19, 1995 a Workshop on Hetero-
structureEpitaxyandDeviceswasheldatSmoleniceCastlenear
Slovakia'scapital Bratislava. The intention ofthisWorkshop was
toestablishandstrengthentiesbetweenscientistsoftheformerly
Socialist East and Middle-European states with their colleagues
fromtheWesterncountries. WiththisaimtheWorkshopfoundthe
financialsupportbyNATOwhichtremendouslyhelpedtofacilitate
organizingthemeeting That the Workshop was also a scientific
success is evidenced by the present volume comprising a selection
of the contributed papers. We are confident that the reader of
these Proceedings can convincehimselfofthe highqualityofthe work
whose results are presented here. We hope that this and the
numerousdiscussionsbetweenthe participants ofthe Workshop will
promote cooperations among scientists from the countries
representedatthemeeting. It is a pleasure to express our gratitude
to NATO and, as representatives ofthe institutions involved in the
organization, to Lubomir Malacky (Institute of Electrical
Engineering, Slovak Academy of Sciences) and Hergo-Heinrich Wehmann
(Institute for Semiconductor Technology, Technical University
Braun- schweig) whose dedicated work was most essential for the
Workshop. A. Schlachetzki J. Novak November1995 xiii
SIMULATIONOFIII-VLAYERGROWTH y. ARIMA DepartmentofPhysics,
Gakushuin University 1-5-1 Mejiro, Toshima-ku, Tokyo 171, Japan AND
T. IRISAWA ComputerCenter, Gakushuin University 1-5-1 Mejiro,
Toshima-ku, Tokyo 171, Japan 1. Introduction Since it was reported
[1] that the intensities of RHEED for the growing surface of aGaAs
crystal in the process of MBE oscillate with a period
correspondingto the completion of a monolayer, this phenomenon has
been applied to the thin layer growth of man-made superlattices.
General
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