Analysis and Design of MOSFETs - Modeling, Simulation, and Parameter Extraction (Hardcover, 1998 ed.)

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.

General

Imprint:	Chapman and Hall
Country of origin:	United Kingdom
Release date:	2001
First published:	1998
Authors:	Juin Jei Liou • Adelmo Ortiz-Conde • Francisco Garcia-Sanchez
Dimensions:	235 x 155 x 22mm (L x W x T)
Format:	Hardcover
Pages:	349
Edition:	1998 ed.
ISBN-13:	978-0-412-14601-5
Categories:	Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors Promotions
LSN:	0-412-14601-0
Barcode:	9780412146015

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