Bringing together researchers from twenty-five countries, Narrow
Gap Semiconductors: Proceedings of the 12th International
Conference on Narrow Gap Semiconductors discusses the recent
advances and discoveries in the science and technology of narrow
gap semiconductors (NGS). In particular, it explores the latest
findings in the fundamental physics of narrow gap materials and
quantum heterostructures as well as device physics, including mid-
and far-infrared lasers, detectors, and spintronic devices. This
volume forms a solid presentation in several important areas of NGS
research, including materials, growth and characterization,
fundamental physical phenomena, and devices and applications. It
examines the novel material of InAs and its related alloys,
heterostructures, and nanostructures as well as more traditional
NGS materials such as InSb, PbTe, and HgCdTe. Several chapters
cover carbon nanotubes and spintronics, along with spin-orbit
coupling, nonparabolicity, and large g-factors. The book also deals
with the physics and applications of low-energy phenomena at the
infrared and terahertz ranges. Continuing the high-quality
tradition of this series, Narrow Gap Semiconductors covers all
aspects of NGS to offer an authoritative, well-balanced perspective
of this evolving field.
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