The dielectric properties of silicon dioxide (SiO2), such as high
resistivity and excellent dielectric strength, have aided the
evolution of microelectronics during the past 40 years. Silica
films have been successfully used over this period for both gate
and interconnect applications in ultra large-scale integration
(ULSI) devices. Dielectric films for gate applications need to have
a higher dielectric constant, while interconnect dielectric
materials need to have a lower dielectric constant, compared with
SiO2. In order to maintain the high drive current and gate
capacitance required of scaled MOSFETs (metal-oxide-silicon field
effect transistors), SiO2 gate dielectrics have decreased in
thickness to less than 2 nm today, with a continued effort to
shrink to the thickness below 1 nm. However, SiO2 layers thinner
than 1.2 nm do not have the insulating properties required of a
gate dielectric and ultrathin SiO2 gate dielectrics give rise to a
number of problems, such as high gate leakage current and
reliability degradation. Therefore, alternative gate dielectric
materials are required.
SiO2, having been the universal dielectric material for both
gate and interlayer dielectric (ILD) applications for many years,
must be replaced by materials with a higher dielectric constant for
the gate applications and a reduced dielectric constant for
interconnect applications. Replacements for silicon dioxide, such
as HfO2, ZrO2, and Al2O3, for introduction as high-k dielectrics
(described in the central section of the book), have material
properties that are quite different compared with those of
traditional dense SiO2 and these differences create many
technological challenges that are thesubject of intensive research.
In addition, not only the development of new gate materials but
also re-engineering of many technological processes is needed. For
example, in the case of low-k materials (discussed in the first
section of the book), active species formed during different
technological processes diffuse into the pores and create severe
damage. All these problems have been stimulating the development of
new technological approaches, which will be dealt with in this
book.
This book presents an in-depth overview of novel developments
made by scientific leaders in the microelectronics community. It
covers a broad range of related topics, from physical principles to
design, fabrication, characterization, and application of novel
dielectric films. This book is intended for postgraduate level
students, PhD students and industrial researchers, to enable them
to gain insight into this important area of research.
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