* This book contains full account of the advances made in the
dilute nitrides, providing an excellent starting point for workers
entering the field.
* It gives the reader easier access and better evaluation of
future trends, Conveying important results and current ideas*
Includes a generous list of references at the end of each chapter,
providing a useful reference to the III-V-N based semiconductors
research community.
The high speed lasers operating at wavelength of 1.3 um and 1.55
um are very important light sources in optical communications since
the optical fiber used as a transport media of light has dispersion
and attenuation minima, respectively, at these wavelengths. These
long wavelengths are exclusively made of InP-based material
InGaAsP/InP. However, there are several problems with this material
system. Therefore, there has been considerable effort for many
years to fabricate long wavelength laser structures on other
substrates, especially GaAs. The manufacturing costs of GaAs-based
components are lower and the processing techniques are well
developed. In 1996 a novel quaternary material GaInAsN was proposed
which could avoid several problems with the existing technology of
long wavelength lasers.In this book, several leaders in the field
of dilute nitrides will cover the growth and processing,
experimental characterization, theoretical understanding, and
device design and fabrication of this recently developed class of
semiconductor alloys. They will review their current status of
research and development.
"Dilute Nitrides (III-N-V) Semiconductors: Physics and
Technology" organises the most current available data, providing a
ready source of information on a wide range of topics, making this
book essential reading for all post graduate students, researchers
and practitioners in the fields of Semiconductors and
Optoelectronics
* This book contains full account of the advances made in the
dilute nitrides, providing an excellent starting point for workers
entering the field.
* It gives the reader easier access and better evaluation of future
trends, Conveying important results and current ideas
* Includes a generous list of references at the end of each
chapter, providing a useful reference to the III-V-N based
semiconductors research community."
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