Silicon germanium alloys have received much attention in recent
years for their potential application in high speed and
optoelectronics applications. Kinetics of SiGe oxidation need to be
well understood for two reasons: (1) to allow predictive process
modeling of the oxidation process for technology development; and
(2) to give insight into the factors that are responsible for the
poor electrical quality of the resulting oxide. Some models have
been proposed to explain the outcomes of the oxidation process, yet
a complete model is still unavailable. It has been shown that the
resulting oxide can be either pure SiO2 or mixed oxides (SiO2 +
GeO2). As well, the oxidation process can result in a layered
structure of both types of oxides. Based on the understanding of
the physical phenomena that occur during the oxidation process, we
concluded a physical model that encompasses the explanations
reported by other researchers as well as some conclusions we
derived.
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