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Cryogenic Operation of Silicon Power Devices (Paperback, Softcover reprint of the original 1st ed. 1998)
Loot Price: R2,919
Discovery Miles 29 190
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Cryogenic Operation of Silicon Power Devices (Paperback, Softcover reprint of the original 1st ed. 1998)
Series: Power Electronics and Power Systems
Expected to ship within 10 - 15 working days
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This is the first comprehensive resource of power device electrical
characteristics in a cryogenic environment. Using theoretical and
experimental knowledge from the literature, temperature dependence
of fundamental silicon material parameters like intrinsic carrier
concentration, carrier mobilities, lifetimes and bandgap narrowing
was identified. The temperature dependent model of avalanche
breakdown was developed using experimental data on numerous
devices. A wide range of power devices, each with its own unique
features, was chosen for theoretical and experimental analysis.
Using these analyses, Schottky diodes, power MOSFETs, power BJTs,
and power JFETs were optimized in the 300-77K temperature range.
Cryogenic Operation of Silicon Power Devices presents the different
characteristics of power devices operated below -55 C (220K). It
provides data and physics based models for power devices operated
at temperatures down to 77K for the first time within a single
source. All commercially available devices have been included to
provide comprehensive coverage.Also, a fundamental analysis of
devices identifies the suitability of various devices to
applications requiring cryogenic operations. A quantitative
analysis of the relative strengths and weaknesses of these devices
is also presented.
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