Plasma based transfer of photoresist (PR) patterns using 193nm PR
films usually suffer from high removal rates and excessive surface
and line edge roughness. The effects of process time, PR material,
bias and source power, pressure and gas chemistry were studied.
Polymer destruction in the top surface, oxygen and hydrogen loss
along with fluorination were observed for all materials initially,
which was followed by steady state etch conditions. A strong
dependence of plasma-induced surface chemical and morphological
changes on polymer structure was observed. In particular, the
adamantane group of 193 nm PR showed poor stability. Two linked
mechanisms for the roughening behavior of the films during
processing were identified: A physical pattern transfer mechanism
enhances initial roughness by nonuniform removal. Additional to
that, roughness formation occurred linear to the energy density
deposited during processing.Even for various feedgas chemistries
adamantyl containing polymers show enhanced roughening rates,
suggesting that the instability of the adamantyl structure used in
193nm PR polymers is the performance limiting factor for processing
PR materials.
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