This thesis presents the first systematic electron transport
investigation of rhombohedral graphite (RG) films and thus lies at
the interface of graphene physics, vdW heterostructure devices and
topological matter. Electron transport investigation into the
rhombohedral phase of graphite was limited to a few layers of
graphene due to the competing hexagonal phase being more abundant.
This work reports that in exfoliated natural graphite films,
rhombohedral domains of up to 50 layers can be found. In the low
energy limit, these domains behave as an N-layer generalisation of
graphene. Moreover, being a potential alternative to twisted
bilayer graphene systems, RG films show a spontaneous
metal-insulator transition, with characteristic symmetry properties
that could be described by mean-field theory where
superconductivity is also predicted in these low energy bands. A
nodal-line semimetal in the bulk limit, RG thin films are a 3D
generalisation of the simplest topological insulator model: the
Su-Schrieffer-Heeger chain. Similar to the more usual topological
insulators, RG films exhibit parallel conduction of bulk states,
which undergo three-dimensional quantum transport that reflects
bulk topology.
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