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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
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Principles of Semiconductor Devices (Hardcover, 2nd Revised edition)
Loot Price: R6,421
Discovery Miles 64 210
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Principles of Semiconductor Devices (Hardcover, 2nd Revised edition)
Series: The Oxford Series in Electrical and Computer Engineering
Expected to ship within 10 - 15 working days
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Donate to Against Period Poverty
Total price: R6,441
Discovery Miles: 64 410
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The dimensions of modern semiconductor devices are reduced to the
point where classical semiconductor theory, including the concepts
of continuous particle concentration and continuous current,
becomes questionable. Further questions relate to two-dimensional
transport in the most important field-effect devices and
one-dimensional transport in nanowires and carbon nanotubes.
Designed for upper-level undergraduate and graduate courses,
Principles of Semiconductor Devices, Second Edition, presents the
semiconductor-physics and device principles in a way that upgrades
classical semiconductor theory and enables proper interpretations
of numerous quantum effects in modern devices. The semiconductor
theory is directly linked to practical applications, including the
links to the SPICE models and parameters that are commonly used
during circuit design. The text is divided into three parts: Part I
explains semiconductor physics; Part II presents the principles of
operation and modeling of the fundamental junctions and
transistors; and Part III provides supplementary topics, including
a dedicated chapter on the physics of nanoscale devices,
description of the SPICE models and equivalent circuits that are
needed for circuit design, introductions to the most important
specific devices (photonic devices, JFETs and MESFETs,
negative-resistance diodes, and power devices), and an overview of
integrated-circuit technologies. The chapters and the sections in
each chapter are organized so as to enable instructors to select
more rigorous and design-related topics as they see fit. New to
this Edition * A new chapter on the physics of nanoscale devices *
A revised chapter on the energy-band model and fully reworked and
updated material on crystals to include graphene and carbon
nanotubes * A revised P-N junction chapter to emphasize the current
mechanisms that are relevant to modern devices * JFETs and MESFETs
in a stand-alone chapter * Fifty-seven new problems and eleven new
examples
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