Epitaxial Growth of III-Nitride Compounds - Computational Approach (Hardcover, 1st ed. 2018)

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

General

Imprint:	Springer International Publishing AG
Country of origin:	Switzerland
Series:	Springer Series in Materials Science, 269
Release date:	April 2018
First published:	2018
Editors:	Takashi Matsuoka • Yoshihiro Kangawa
Dimensions:	235 x 155mm (L x W)
Format:	Hardcover
Pages:	223
Edition:	1st ed. 2018
ISBN-13:	978-3-319-76640-9
Categories:	Books > Science & Mathematics > Mathematics > Applied mathematics > General Books > Science & Mathematics > Physics > States of matter > Condensed matter physics (liquids & solids) Books > Professional & Technical > Mechanical engineering & materials > Materials science > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
LSN:	3-319-76640-6
Barcode:	9783319766409

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