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Copper Interconnect Technology (Paperback, 2009 ed.)
Loot Price: R4,532
Discovery Miles 45 320
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Copper Interconnect Technology (Paperback, 2009 ed.)
Expected to ship within 10 - 15 working days
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Since overall circuit performance has depended primarily on
transistor properties, previous efforts to enhance circuit and
system speed were focused on transistors as well. During the last
decade, however, the parasitic resistance, capacitance, and
inductance associated with interconnections began to influence
circuit performance and will be the primary factors in the
evolution of nanoscale ULSI technology. Because metallic
conductivity and resistance to electromigration of bulk copper (Cu)
are better than aluminum, use of copper and low-k materials is now
prevalent in the international microelectronics industry. As the
feature size of the Cu-lines forming interconnects is scaled,
resistivity of the lines increases. At the same time
electromigration and stress-induced voids due to increased current
density become significant reliability issues. Although
copper/low-k technology has become fairly mature, there is no
single book available on the promise and challenges of these
next-generation technologies. In this book, a leader in the field
describes advanced laser systems with lower radiation wavelengths,
photolithography materials, and mathematical modeling approaches to
address the challenges of Cu-interconnect technology.
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