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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors

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Analysis and Simulation of Heterostructure Devices (Hardcover, 2004 ed.) Loot Price: R4,532

Discovery Miles 45 320

Repayment Terms: R425 pm x 12*

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Analysis and Simulation of Heterostructure Devices (Hardcover, 2004 ed.): Vassil Palankovski, Rudiger Quay

Analysis and Simulation of Heterostructure Devices (Hardcover, 2004 ed.)

Vassil Palankovski, Rudiger Quay

Series: Computational Microelectronics

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Loot Price R4,532 Discovery Miles 45 320 | Repayment Terms: R425 pm x 12*

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The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

General

Imprint:	Springer-Verlag
Country of origin:	Austria
Series:	Computational Microelectronics
Release date:	December 2003
First published:	2004
Authors:	Vassil Palankovski • Rudiger Quay
Dimensions:	235 x 155 x 19mm (L x W x T)
Format:	Hardcover
Pages:	289
Edition:	2004 ed.
ISBN-13:	978-3-211-40537-6
Categories:	Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors Promotions
LSN:	3-211-40537-2
Barcode:	9783211405376