This book provides analysis and discusses the design of various
MOSFET technologies which are used for the design of Double-Pole
Four-Throw (DP4T) RF switches for next generation communication
systems. The authors discuss the design of the (DP4T) RF switch by
using the Double-Gate (DG) MOSFET, as well as the Cylindrical
Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high
dielectric material) in the design of DG MOSFET and CSDG MOSFET is
also explored. Coverage includes comparison of Single-gate MOSFET
and Double-gate MOSFET switching parameters, as well as testing of
MOSFETs parameters using image acquisition.
General
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