Fundamentals of Modern VLSI Devices (Hardcover, 3rd Revised edition)

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

General

Imprint:	Cambridge UniversityPress
Country of origin:	United Kingdom
Release date:	December 2021
Authors:	Yuan Taur • Tak H. Ning
Dimensions:	250 x 173 x 32mm (L x W x T)
Format:	Hardcover
Pages:	622
Edition:	3rd Revised edition
ISBN-13:	978-1-108-48002-4
Categories:	Books > Science & Mathematics > Physics > States of matter > Condensed matter physics (liquids & solids) Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors Promotions
LSN:	1-108-48002-0
Barcode:	9781108480024

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