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This text presents papers given at a discussion meeting of The
Royal Society, held in July 1992, concerning thin film diamond.
Traditionally, commercial diamond synthesis was almost entirely by
the high-pressure, high-temperature technique, but in recent years,
low-pressure diamond synthesis has attracted world-wide interest
due to the possible use of diamond films in commercial
applications. These papers review these low-pressure diamond
synthesis techniques. An historical overview of the low-pressure
growth techniques and a description of diamond and crystal
morphology is given, followed by a discussion of the kinetics and
gas phase chemistry involved in thin film growth. Peter Bachmann
presents a review of the current deposition techniques, and
summarizes the results of various deposition conditions to show
that diamond growth is only possible in a narrow range of gas
compositions. Other chapters discuss the electronic, optical,
thermal and mechanical properties of thin diamond films as well as
the electronic structure, deposition techniques and applications of
diamond-like carbon (DLC) films. The final chapter discusses the
various thermal and optical infra-red and X-ray applications of
diamond thin films. Researchers in materials, physics and
mechanical engineering should find this text a timely review of a
rapidly advancing field, and it should provide practising engineers
in the electronic and manufacturing industries with a useful
overview of the field.
ThIS volume contaInS a selectIOn of InvIted revIew papers presented
at a Royal SocIety DIscussIOn meetIng on ThIn FIlm DIamond held In
London on 15 and 16 July 1992 The topIC of low pressure synthesIs
has attracted world wIde Interest and become IncreasIngly active In
recent years due to the pOSSIble use of dIamond films In commerCIal
apphcatlOns Until recently commercIal dIamond synthesIs was almost
entIrely by the hIgh pressure hIgh temperature technIque In whIch
dIamond IS precIpItated as an eqUlhbnum phase from a
carbon-contaInIng hqUld metal catalyst In thIS way crystals may be
formed up to 10mm or so In sIze The metastable low pressure
techmques cannot compete In cost but can be used to fabrIcate large
area wafers or predetermIned shapes not pOSSIble by other means
Most of the low pressure techmques stem from the work of Eversole
whICh was first reported In 1962 He exposed a hot dIamond substrate
alternately to a hydrocarbon gas, whIch deposIted a mIxture of
dIamond and graphIte, and then to hydrogen, whICh preferen tIally
etched away the graphite In later developments th se two stages
have been combIned to form a contInUOUS process and dIffer only In
the way the etchant IS generated In thIS volume an hIstorIcal
overvIew of these low pressure growth techmques and a deSCrIptIOn
of dIamond and crystal morphology IS gIVen by John Angus and hIS
co-authors In theIr paper on the chemICal vapour depOSItIon of
dIamond James Butler and RIchard WoodIn"
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