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Double gate MOSFET is widely used for sub-50nm technology of
transistor design .They have immunity to short channel effects,
reduced leakage current and high scaling potential. The single gate
Silicon-on-insulator (SOI) devices give improved circuit speed and
power consumption .But as the transistor size is reduced the close
proximity between source and drain reduces the ability of the gate
electrode to control the flow of current and potential distribution
in the channel. To reduce SCE we need increase gate to channel
coupling with respect to source/drain to channel coupling. This
book presents the compact modeling of long channel undoped and
doped symmetric double-gate MOSFET. The formulation starts with the
solution of Poisson's equation which is then coupled to the Pao-Sah
current equation to obtain the analytical drain-current model in
terms of carrier concentration. The performance analysis of both
the doped and undoped body symmetric DGMOS is done by using the
model . Comparison of the two types of DGMOS is also done on the
basis their electrical characteristics.
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