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The quality of physical models is decisive for the understanding of
the physical processes in semiconductor devices and for a reliable
prediction of the behavior of a new generation of devices. The
first part of the book contains a critical review on models for
silicon device simulators, which rely on moments of the Boltzmann
equation. With reference to fundamental experimental and
theoretical work, an extensive collection of widely used models is
discussed in terms of physical accuracy and application results.
The second part outlines the derivation of physics-based models for
bulk mobility, band-to-band tunneling, defect-assisted tunneling,
thermal recombination, non-ideal metal-semiconductor contact, and
direct and multiphonon-assisted tunneling through insulating
layers, all from a microscopic level. The models are compared with
experimental data and applied to a number of simulation examples.
This part also describes some new approaches of "taylored quantum
mechanics for deriving device models from "first principles and the
fundamental problems therein."
From the reviews: ..". this is a well produced book, written in
a easy to read style, and will also be a very useful primer for
someone starting out the field ...], and a useful source of
reference for experienced users ..." Microelectronics Journal
Fritz Nathan (1891–1960) zählte zu den aufstrebenden Architekten
im Deutschland der Zwanzigerjahre. Mit dem Neuen Jüdischen
Friedhof in Frankfurt/Main, seinen Warenhäusern und
Industriebauten schuf er signifikante Beispiele des Neuen Bauens.
Doch dann führte die nationalsozialistische Diktatur zum jähen
Ende der Karriere des jüdischen Architekten. 1940 emigrierte er in
die USA und ließ sich in New York nieder. Nach schwierigen
Anfängen konnte er in seinem Beruf wieder Fuß fassen. Die längst
fällige Würdigung Nathans weist die herausragende Bedeutung
seines Beitrags zum Neuen Bauen in Deutschland sowie zur modernen
Synagogenarchitektur in den USA nach.
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