The text showcases the recent advancements in the field of microwave engineering, starting from the use of innovative materials to the latest microwave applications. It will also highlight safety guidelines for exposure to microwave and radio frequency energy. The book provides information on measuring circuit parameters and di-electric parameters. • Explains microwave antennas, microwave communication, microwave propagation, microwave devices, and circuits in detail. •Covers microwave measurement techniques, radiation hazards, space communication, and safety measures. •Focuses on advanced computing technologies, wireless communication, and fiber optics. •Presents scattering matrix and microwave passive components and devices such as phase shifters, and power dividers. • Showcases the importance of space communication, radio astronomy, microwave material processing, and advanced computing technologies. The text provides a comprehensive study of the foundations of microwave heating and its interactions with materials for various applications. It addresses applications of microwave devices, and technologies in diverse areas including computational electromagnetics, remote sensing, transmission lines, radiation hazards, and safety measures. It emphasizes the impact of resonances on microwave power absorption and the effect of nonuniformity on heating rates. The text is primarily written for senior undergraduate, graduate students, and academic researchers in the fields of electrical engineering, electronics and communication engineering, computer engineering, and materials science.

This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1- m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1- m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET."