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This book brings together selective and specific chapters on
nanoscale carbon and applications, thus making it unique due to its
thematic content. It provides access to the contemporary
developments in carbon nanomaterial research in electronic
applications. Written by professionals with thorough expertise in
similar broad area, the book is intended to address multiple
aspects of carbon research in a single compiled edition. It targets
professors, scientists and researchers belonging to the areas of
physics, chemistry, engineering, biology and medicine, and working
on theory, experiment and applications of carbon nanomaterials.
This book brings together selective and specific chapters on
nanoscale carbon and applications, thus making it unique due to its
thematic content. It provides access to the contemporary
developments in carbon nanomaterial research in electronic
applications. Written by professionals with thorough expertise in
similar broad area, the book is intended to address multiple
aspects of carbon research in a single compiled edition. It targets
professors, scientists and researchers belonging to the areas of
physics, chemistry, engineering, biology and medicine, and working
on theory, experiment and applications of carbon nanomaterials.
Resistive Random Access Memory (RRAM) is a transistor free
non-volatile dynamic RAM cell with very simple
Metal-Insulator-Metal (MIM) structure and very high switching speed
and high density memories. Different types of oxides like
Transition Metal Oxides, Perovskite Oxides etc are used as the
insulating dielectric layer of the capacitor like MIM structure.
This ion-conducting oxide insulating layer can change its
resistance by externally stimulated electric pulses with different
amplitude and frequency. The steps precondition the system which
can subsequently be switched between high conductive ON or Low
Resistive State (LRS) and a less conductive OFF or High Resistive
State (HRS). In this experimental study Sol-gel derived Titanium
Dioxide (TiO2) is considered as the ion conducting insulating
dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag)
Metal-Insulator-Metal structure for RRAM devices have been designed
and fabricated and studied in this book. Different analytical
models and explanations to establish the mechanism behind the
Transition metal oxide based RRAM device and Resistive Switching
phenomenon are the addition features of this book.
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