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Quantum Well Intersubband Transition Physics and Devices (Hardcover, 1994 ed.): Hui C. Liu, Barry F. Levine, Jan Y. Andersson Quantum Well Intersubband Transition Physics and Devices (Hardcover, 1994 ed.)
Hui C. Liu, Barry F. Levine, Jan Y. Andersson
R8,414 Discovery Miles 84 140 Ships in 10 - 15 working days

Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.

Intersubband Transitions in Quantum Wells (Paperback, Softcover reprint of the original 1st ed. 1992): Emmanuel Rosencher,... Intersubband Transitions in Quantum Wells (Paperback, Softcover reprint of the original 1st ed. 1992)
Emmanuel Rosencher, Borge Vinter, Barry F. Levine
R1,514 Discovery Miles 15 140 Ships in 10 - 15 working days

This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.

Quantum Well Intersubband Transition Physics and Devices (Paperback, Softcover reprint of the original 1st ed. 1994): Hui C.... Quantum Well Intersubband Transition Physics and Devices (Paperback, Softcover reprint of the original 1st ed. 1994)
Hui C. Liu, Barry F. Levine, Jan Y. Andersson
R8,162 Discovery Miles 81 620 Ships in 10 - 15 working days

Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.

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