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This thesis sheds light on the unique dynamics of optoelectronic
devices based on semiconductor quantum-dots. The complex scattering
processes involved in filling the optically active quantum-dot
states and the presence of charge-carrier nonequilibrium conditions
are identified as sources for the distinct dynamical behavior of
quantum-dot based devices. Comprehensive theoretical models, which
allow for an accurate description of such devices, are presented
and applied to recent experimental observations. The low
sensitivity of quantum-dot lasers to optical perturbations is
directly attributed to their unique charge-carrier dynamics and
amplitude-phase-coupling, which is found not to be accurately
described by conventional approaches. The potential of quantum-dot
semiconductor optical amplifiers for novel applications such as
simultaneous multi-state amplification, ultra-wide wavelength
conversion, and coherent pulse shaping is investigated. The
scattering mechanisms and the unique electronic structure of
semiconductor quantum-dots are found to make such devices prime
candidates for the implementation of next-generation optoelectronic
applications, which could significantly simplify optical
telecommunication networks and open up novel high-speed data
transmission schemes.
This thesis sheds light on the unique dynamics of optoelectronic
devices based on semiconductor quantum-dots. The complex scattering
processes involved in filling the optically active quantum-dot
states and the presence of charge-carrier nonequilibrium conditions
are identified as sources for the distinct dynamical behavior of
quantum-dot based devices. Comprehensive theoretical models, which
allow for an accurate description of such devices, are presented
and applied to recent experimental observations. The low
sensitivity of quantum-dot lasers to optical perturbations is
directly attributed to their unique charge-carrier dynamics and
amplitude-phase-coupling, which is found not to be accurately
described by conventional approaches. The potential of quantum-dot
semiconductor optical amplifiers for novel applications such as
simultaneous multi-state amplification, ultra-wide wavelength
conversion, and coherent pulse shaping is investigated. The
scattering mechanisms and the unique electronic structure of
semiconductor quantum-dots are found to make such devices prime
candidates for the implementation of next-generation optoelectronic
applications, which could significantly simplify optical
telecommunication networks and open up novel high-speed data
transmission schemes.
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