This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mobility. Recent progress in quantum structures such as two-dimensional electron gas, superlattices, quantum Hall effect, electron confinement and the Landauer formula are included. The Quantum Hall effect is presented with different models. In the second edition, the addition energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. Also the physics of semiconductor Lasers is described in detail including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue Lasers, optical confinement, laser modes, strained quantum wells lasers which will give insight into the physics of various kinds of semiconductor lasers, in addition to the various processes of luminescence.

The International Symposium on the Science and Technology of Mesoscopic Structures was held at Shin-Kohkaido in Nara from November 6-8, 1991. The symposium was sponsored by the International Institute for Advanced Study and partly by Nara Prefecture, Nara City, Nara Convention Bureau, and the Ministry of Education, Science and Culture of Japan, as well as industrial organizations. We would like to acknowledge the support of the symposium by these or ganizations. The scope of the symposium was planned by the organizing committee to cover outstanding contributors in the fields of (1) ballistic transport, (2) electron wave guides and interference effects, (3) quantum confinement effects, (4) tunneling phenomena, (5) optical nonlinearity, and (6) fabrication technology of meso scopic structures. Twenty-six invited speakers were selected from the United States, Europe, and Japan. In addition twenty-four contributed papers were accepted for presentation at the poster session. These papers are included in the proceedings. We are grateful to the organizing committee, Ms. Y oshiko Kusaki of the Inter national Institute for Advanced Study for the secretarial service, and Dr. Nobuya Mori, Osaka University, for his scientific cooperation. Thanks are also due to the authors and the participants for their contributions to a successful symposium."

This textbook presents a detailed description of basic semiconductor physics, covering a wide range of important phenomena in semiconductors, from simple to advanced. It introduces and explains four different methods of energy band calculations in the full band region and covers fundamental topics such as the effective mass approximation and electron motion in a periodic potential, the Boltzmann transport equation, and deformation potentials used for the analysis of transport properties. The text also examines experimental and theoretical analyses of cyclotron resonance in detail and reviews essential optical and transport properties, while covering optical transitions, electron–phonon interaction, and electron mobility. It presents numerical calculations of scattering rate, relaxation time, and mobility for typical semiconductors with bulk, quantum well and HEMT structures including wideband gap materials such as GaN and SiC in addition to IV and III-V semiconductors. The updated fourth edition includes coverage of new topics such as surface-modulated superlattices, Wannier–Stark effect, Bloch oscillation, wide band gap semiconductors, and photonic crystals. Featuring full-color diagrams calculated with updated physical parameters, as well as chapter-end problems and solutions, this tried and tested textbook on the basics of semiconductors physics is the cornerstone to any graduate or upper-level undergraduate course on the subject.