Silicon carbide (SiC) was predicted to quickly replace Silicon in the early 1950s because of its excellent comparative material properties. Advanced SiC crystal growth technology developed in the 1980s has revitalized the investigation of SiC. SiC optoelectronic devices still have attractive features and unique applications. For example, Silicon carbide is the semiconductor of choice for new applications including electric-power devices, high-frequency devices, high-temperature devices, and radiation -resistant devices. It is important, therefore, to stimulate further investigation of SiC for other possible optoelectronic applications.

The book is organized for a wide range of audiences and covers each of the critical aspects of SiC science and technology. Each chapter, written by experts in the field, reviews work in the field, discusses progress made by different groups, and suggests further work needed. This book is a reference not only for experts, but also for newcomers and postgraduates with a background in materials science, electrical engineering and applied physics. The topics covered in the book include: epitaxial and crystal growth, characterization of surface and epilayer, structural, electrical and optical properties, the key processing technologies of ion implantation and ohm contacts; device modeling and fabrication; and porous SiC technology.