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In the last ten years, the physics and technology of low
dimensional structures has experienced a tremendous development.
Quantum structures with vertical and lateral confinements are now
routinely fabricated with feature sizes below 100 run. While
quantization of the electron states in mesoscopic systems has been
the subject of intense investigation, the effect of confinement on
lattice vibrations and its influence on the electron-phonon
interaction and energy dissipation in nanostructures received atten
tion only recently. This NATO Advanced Research Workshop on Phonons
in Sem iconductor Nanostructures was a forum for discussion on the
latest developments in the physics of phonons and their impact on
the electronic properties of low-dimensional structures. Our goal
was to bring together specialists in lattice dynamics and nanos
tructure physics to assess the increasing importance of phonon
effects on the physical properties of one-(lD) and zero-dimensional
(OD) structures. The Workshop addressed various issues related to
phonon physics in III-V, II-VI and IV semiconductor nanostructures.
The following topics were successively covered: Models for confined
phonons in semiconductor nanostructures, latest experimental
observations of confined phonons and electron-phonon interaction in
two-dimensional systems, elementary excitations in nanostructures,
phonons and optical processes in reduced dimensionality systems,
phonon limited transport phenomena, hot electron effects in quasi -
ID structures, carrier relaxation and phonon bottleneck in quantum
dots."
Good old Gutenberg could not have imagined that his revolutionary
printing concept which so greatly contributed to dissemination of
knowledge and thus today 's wealth, would have been a source of
inspiration five hundred years later. Now, it seems intuitive that
a simple way to produce a large number of replicates is using a
mold to emboss pattern you need, but at the nanoscale nothing is
simple: the devil is in the detail. And this book is about the
"devil." In the following 17 chapters, the authors-all of them well
recognized and active actors in this emerging field-describe the
state-of-the-art, today 's technological bottlenecks and the
prospects for micro-contact printing and nanoimprint lithography.
Many results of this book originate from projects funded by the
European Com mission through its "Nanotechnology Information
Devices" (NID) initiative. NID was launched with the objective to
develop nanoscale devices for the time when the red brick scenario
of the ITRS roadmap would be reached. It became soon clear however,
that there was no point to investigate only alternative devices to
CMOS, but what was really needed was an integrated approach that
took into account more facets of this difficult undertaking.
Technologically speaking, this meant to have a coherent strategy to
develop novel devices, nanofabrication tools and circuit &
system architectures at the same time."
This volume comprises the proceedings of the NATO Advanced Research
Workshop on the Science and Engineering of 1- and O-dimensional
semiconductors held at the University of Cadiz from 29th March to
1st April 1989, under the auspices of the NATO International
Scientific Exchange Program. There is a wealth of scientific
activity on the properties of two-dimensional semiconductors
arising largely from the ease with which such structures can now be
grown by precision epitaxy techniques or created by inversion at
the silicon-silicon dioxide interface. Only recently, however, has
there burgeoned an interest in the properties of structures in
which carriers are further confined with only one or, in the
extreme, zero degrees of freedom. This workshop was one of the
first meetings to concentrate almost exclusively on this subject:
that the attendance of some forty researchers only represented the
community of researchers in the field testifies to its rapid
expansion, which has arisen from the increasing availability of
technologies for fabricating structures with small enough (sub - O.
I/tm) dimensions. Part I of this volume is a short section on
important topics in nanofabrication. It should not be assumed from
the brevity of this section that there is little new to be said on
this issue: rather that to have done justice to it would have
diverted attention from the main purpose of the meeting which was
to highlight experimental and theoretical research on the
structures themselves.
This volume contains the Proceedings of the NATO Advanced Research
Workshop on "Optical Properties of Narrow-Gap Low-Dimensional
Structures," held from July 29th to August 1st, 1986, in St.
Andrews, Scotland, under the auspices of the NATO International
Scientific Exchange Program. The workshop was not limited to
optical properties of narrow-gap semiconductor structures (Part
III). Sessions on, for example, the growth methods and
characterization of III-V, II-VI, and IV-VI materials, discussed in
Part II, were an integral part of the workshop. Considering the
small masses of the carriers in narrow-gap low dimensional
structures (LOS), in Part I the enhanced band mixing and magnetic
field effects are explored in the context of the envelope function
approximation. Optical nonlinearities and energy relaxation
phenomena applied to the well-known systems of HgCdTe and
GaAs/GaAIAs, respectively, are reviewed with comments on their
extension to narrow gap LOS. The relevance of optical observations
in quantum transport studies is illustrated in Part IV. A review of
devices based on epitaxial narrow-gap materials defines a frame of
reference for future ones based on two-dimensional narrow-gap
semiconductors; in addition, an analysis of the physics of quantum
well lasers provides a guide to relevant parameters for narrow-gap
laser devices for the infrared (Part V). The roles and potentials
of special techniques are explored in Part VI, with emphasis on
hydrostatic pressure techniques, since this has a pronounced effect
in small-mass, narrow-gap, non-parabolic structures."
Good old Gutenberg could not have imagined that his revolutionary
printing concept which so greatly contributed to dissemination of
knowledge and thus today 's wealth, would have been a source of
inspiration five hundred years later. Now, it seems intuitive that
a simple way to produce a large number of replicates is using a
mold to emboss pattern you need, but at the nanoscale nothing is
simple: the devil is in the detail. And this book is about the
"devil." In the following 17 chapters, the authors-all of them well
recognized and active actors in this emerging field-describe the
state-of-the-art, today 's technological bottlenecks and the
prospects for micro-contact printing and nanoimprint lithography.
Many results of this book originate from projects funded by the
European Com mission through its "Nanotechnology Information
Devices" (NID) initiative. NID was launched with the objective to
develop nanoscale devices for the time when the red brick scenario
of the ITRS roadmap would be reached. It became soon clear however,
that there was no point to investigate only alternative devices to
CMOS, but what was really needed was an integrated approach that
took into account more facets of this difficult undertaking.
Technologically speaking, this meant to have a coherent strategy to
develop novel devices, nanofabrication tools and circuit &
system architectures at the same time."
In the last ten years, the physics and technology of low
dimensional structures has experienced a tremendous development.
Quantum structures with vertical and lateral confinements are now
routinely fabricated with feature sizes below 100 run. While
quantization of the electron states in mesoscopic systems has been
the subject of intense investigation, the effect of confinement on
lattice vibrations and its influence on the electron-phonon
interaction and energy dissipation in nanostructures received atten
tion only recently. This NATO Advanced Research Workshop on Phonons
in Sem iconductor Nanostructures was a forum for discussion on the
latest developments in the physics of phonons and their impact on
the electronic properties of low-dimensional structures. Our goal
was to bring together specialists in lattice dynamics and nanos
tructure physics to assess the increasing importance of phonon
effects on the physical properties of one-(lD) and zero-dimensional
(OD) structures. The Workshop addressed various issues related to
phonon physics in III-V, II-VI and IV semiconductor nanostructures.
The following topics were successively covered: Models for confined
phonons in semiconductor nanostructures, latest experimental
observations of confined phonons and electron-phonon interaction in
two-dimensional systems, elementary excitations in nanostructures,
phonons and optical processes in reduced dimensionality systems,
phonon limited transport phenomena, hot electron effects in quasi -
ID structures, carrier relaxation and phonon bottleneck in quantum
dots."
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