This book was originally published in Japanese in honour of Professor S. Chikazumi on the occasion of his retirement from the University of Tokyo in March 1982. Physicists who had been supervised by him or had closely col laborated with him wrote articles on recent developments in magnetism and its engineering applications. In the preface of his excellent textbook Physics of Magnetism (Wiley, 1964), Professor Chikazumi says that recent research in magnetism deals with fundamental physical problems and, at the same time, with more secondary magnetic phenomena, as well as with engineering applications of magnetic materials to electromagnetic machines, permanent magnets and electronic computers, and that the purpose of his textbook is to give a general view of these magnetic phenomena, focusing its main interest at the center of such a broad field. Always keeping such a viewpoint in mind, Professor Chikazumi has contributed a great deal to both fundamental physics and applications of magnetism. This is described in Chap. 1 of this book. Many books have been published on both the physics and applications of magnetism. However, no single book has a viewpoint covering both of them. The recent development of high technology needs such a broad viewpoint for scientists and engineers since it is a product of both fundamental science and technology. Research in magnetism is based on the response which materials show to the application of magnetic fields."

This is one of the first application-orientated books on the subject. The main topics are magnetic sensors with high resolutions and magnetic read heads with high sensitivities, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memory (MRAM) with non-volatile non-destructive and radiation-hard characteristics.

This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

This volume features up-to-date information on the geometric parameters of free inorganic and organic polyatomic molecules. Coverage takes into account all experimental methods for the determination of quantitative structural data of free molecules. The data obtained by these methods have been critically evaluated and compiled. They are presented separately for each molecule, together with a computer-drawn schematic figure of the structure.

This is a Standard Reference Book with selected and easily retrievable data from the fields of physics and chemistry collected by international scientists. Volume II/28 is a supplemented and revised edition of the preceding volumes II/7, II/15, II/21, II/23 and II/25, containing up to date information on the geometric parameters (internuclear distances, bond angles, dihedral angles of internal rotation etc.) of free inorganic and organic polyatomic molecules.

Volume II/28 is a supplemented and revised edition of the preceding volumes II/7, II/15, II/21, II/23 and II/25, containing up to date information on the geometric parameters (internuclear distances, bond angles, dihedral angles of internal rotation etc.) of free inorganic and organic polyatomic molecules. The data has been critically evaluated and compiled.