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This book presents the material necessary for understanding the
physics, operation, design, and performance of modern MOSFETs with
nanometer dimensions. It offers a brief introduction to the field
and a thorough overview of MOSFET physics, detailing the relevant
basics. The authors apply presented models to calculate and
demonstrate transistor characteristics, and they include required
input data (e.g., dimensions, doping) enabling readers to repeat
the calculations and compare their results. The book introduces
conventional and novel advanced MOSFET concepts, such as
multiple-gate structures or alternative channel materials. Other
topics covered include high-k dielectrics and mobility enhancement
techniques, MOSFETs for RF (radio frequency) applications, MOSFET
fabrication technology.
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