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This monograph arose out of the recognition of the importance of
hydrogen in modern semiconductor technology. Hydrogen is a
component of most chemicals used in the fabrication of electronic
and photonic devices, is easily incorporated into semiconductors
and it is a model impurity for studying defect reactions in solids.
While writing this volume we have received a good deal of encourage
ment from our colleagues at AT&T Bell Laboratories, State
University of New York at Albany and Lehigh University, and from
collaborators at other institutions: to them we extend our sincere
appreciation. In particular we would like to thank W. e.
Dautremont-Smith, J. Lopata, V. Swamina than, K. Bergman, L. e.
Synder, P. Deak, J. T. Borenstein, T. S. Shi, D. Tul chinsky, G. G.
DeLeo, W. B. Fowler, G. D. Watkins and D. Kozuch for their crucial
contributions to this work. We would also like to thank Mrs. Danuta
Sowinska-Kahn for her unfailing expertise in preparing much of the
art work. Finally we owe a great debt to Helmut Lotsch of
Springer-Verlag for his initial suggestion to write this book and
then his patient and professional guidance in seeing the project to
fruition. Murray Hill, NJ S. J. Pearton Albany, NY J. w. Corbett
Bethlehem, P A M. Stavola October 1991 v Contents 1. Introduction .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.
Hydrogen Incorporation in Crystalline Semiconductors 4 2. l
Techniques for Hydrogen Incorporation in Semiconductors . . . . . .
. . . . . . . . . . . . . . . . . 5 2. 1. 1 Hydrogen Plasma
Exposure. . . . . . . . . . . . . . . . . . . 5 2. l. 2 Hydrogen
Implantation . . . . . . ."
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