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The objective of this book is to characterize the optoelectronic
properties of quaternary n-Al0.08In0.08Ga0.84N thin films grown via
plasma assistance molecular beam epitaxy on sapphire (Al2O3) and
silicon (Si) substrates for different optoelectronic applications,
including Al0.08In0.08Ga0.84N (MSM) photodetectors (PDs), solar
cells and multi-quantum well (MQW) laser diodes (LDs). Defect-free
films with high structural, optical and electrical qualities were
obtained. X-ray diffraction analysis was used to characterize small
full width at half maximum intensity of diffraction peaks, low
compressive strain, relatively large grain size and low dislocation
density which produced smooth surfaces without any phases
separation or cracks. Scanning electron microscopy,
energy-dispersive X-ray microscopy and atomic force microscopy
images confirmed these characterizations. Furthermore, high optical
quality, as well as high absorption and absorption coefficients
were observed using PL and UV-VIS spectroscopy. Finally, the
simulation of Al0.08In0.08Ga0.84N MQW LD using ISE TCAD software
was designed and optimized. The best performance of the LDs was
achieved at a quantum well number of 4.
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