MicroLEDs', Volume 106 is currently recognized as the ultimate display technology and one of the fastest-growing technologies in the world as technology giants utilize it on a wide-ranging set of products. This volume combines contributions from MicroLED pioneers and world's leading experts in the field who focus on the MicroLED development, current cutting-edge technologies of pursuing for realizing MicroLED large flat panel displays and televisions, virtual reality and 3D displays, light source for LI-FI data communications, neural interface and optogenetics, and future MicroLED technology trends.

Wide bandgap light emitters include laser diodes and light-emitting diodes (LED), the most modern diodes widely used in current technologies as microelectronics and optoelectronics. Rapid advances have been made during the last few years, with the result that more research is devoted to applications in line with the expanding market for optoelectronics.
This volume deals with recent research results on wide bandgap light emitting materials, introducing new concepts for devices based on these materials. The editors, scientists with the best reputations, have invited authors from different institutions who are acknowledged researchers in the field as well as being involved in industrial applications. They represent several lines of research: III-nitride compounds, ZnO and ZnSe, the most promising materials for device applications.

The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series "Optoelectronic Properties of Semiconductors and Superlattices."
Part I begins with time-resolved studies of semiconductors and moves on to the emphasis on time-resolved photoluminescence of nitride materials and device technology and focuses on Raman studies and properties of III Nitrides.
This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds. This would be excellent for newcomers to the field and is a stimulus to further advances for experienced researchers."III-Nitride Semiconductors: Optical Properties Part I" combines contributions from active experts in the field with diverse backgrounds. This book provides a very important step in advancing the state of research and device development in the field of III-nitride materials.

This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the series"Optoelectronic Properties of Semiconductors and Superlattices."
Part II consists of chapters with emphasis on the optical spectroscopy of highly excited group III-nitrides, theoretical calculations and experimental measurements of optical constants of III-nitrides. The remaining five chapters focus on the relationships and properties of GaN and InGaN as relating to III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds for newcomers to the field and will be a stimulus to further advances for experienced researchers. The chapters contained in this volume constitutes a representative sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.