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This book reviews the experimental measurements of density, thermal
conductivity, viscosity, and electrical conductivity on the binary,
pseudo-binary melts of the most advanced IR-detector material
systems of HgCdTe and HgZnTe as well as the theoretical analyses of
these results. The time-dependent measurements on the relaxation
behavior of the thermophysical properties during rapid cooling of
the melts were also performed to elucidate the characteristics of
the structural fluctuation and transition of the melts. The author
shows his research results which extend understanding of the
solidification process in order to interpret and improve the
experimental results of crystal growth and enhances the fundamental
knowledge of heterophase fluctuations phenomena in the melts so as
to improve the melt growth processes of all the semiconductor
systems. An in-depth study on the thermophysical properties and
their time-dependent structural dynamic processes taking place in
the vicinity of the solid-liquid phase transition of the narrow
homogeneity range HgTe-based ternary semiconductors as well as the
structural analysis of the alloy homogenization process in the melt
is needed to understand and to improve the crystal growth
processes. This book is intended for graduate students and
professionals in materials science as well as engineers preparing
and developing optical devices with semiconductors. The theory of
heterophase fluctuations of liquids is applicable to any many-body
systems including condensed-matter physics and field theory.
This book reviews the experimental measurements of density, thermal
conductivity, viscosity, and electrical conductivity on the binary,
pseudo-binary melts of the most advanced IR-detector material
systems of HgCdTe and HgZnTe as well as the theoretical analyses of
these results. The time-dependent measurements on the relaxation
behavior of the thermophysical properties during rapid cooling of
the melts were also performed to elucidate the characteristics of
the structural fluctuation and transition of the melts. The author
shows his research results which extend understanding of the
solidification process in order to interpret and improve the
experimental results of crystal growth and enhances the fundamental
knowledge of heterophase fluctuations phenomena in the melts so as
to improve the melt growth processes of all the semiconductor
systems. An in-depth study on the thermophysical properties and
their time-dependent structural dynamic processes taking place in
the vicinity of the solid-liquid phase transition of the narrow
homogeneity range HgTe-based ternary semiconductors as well as the
structural analysis of the alloy homogenization process in the melt
is needed to understand and to improve the crystal growth
processes. This book is intended for graduate students and
professionals in materials science as well as engineers preparing
and developing optical devices with semiconductors. The theory of
heterophase fluctuations of liquids is applicable to any many-body
systems including condensed-matter physics and field theory.
The book describes developments in the crystal growth of bulk II-VI
semiconductor materials. A fundamental, systematic, and in-depth
study of the physical vapor transport (PVT) growth process is the
key to producing high-quality single crystals of semiconductors. As
such, the book offers a comprehensive overview of the extensive
studies on ZnSe and related II-VI wide bandgap compound
semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further,
it shows the detailed steps for the growth of bulk crystals
enabling optical devices which can operate in the visible spectrum
for applications such as blue light emitting diodes, lasers for
optical displays and in the mid-IR wavelength range, high density
recording, and military communications. The book then discusses the
advantages of crystallization from vapor compared to the
conventional melt growth: lower processing temperatures, the
purification process associated with PVT, and the improved surface
morphology of the grown crystals, as well as the necessary
drawbacks to the PVT process, such as the low and inconsistent
growth rates and the low yield of single crystals. By presenting
in-situ measurements of transport rate, partial pressures and
interferometry, as well as visual observations, the book provides
detailed insights into in the kinetics during the PVT process. This
book is intended for graduate students and professionals in
materials science as well as engineers preparing and developing
optical devices with semiconductors.
The book describes developments in the crystal growth of bulk II-VI
semiconductor materials. A fundamental, systematic, and in-depth
study of the physical vapor transport (PVT) growth process is the
key to producing high-quality single crystals of semiconductors. As
such, the book offers a comprehensive overview of the extensive
studies on ZnSe and related II-VI wide bandgap compound
semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further,
it shows the detailed steps for the growth of bulk crystals
enabling optical devices which can operate in the visible spectrum
for applications such as blue light emitting diodes, lasers for
optical displays and in the mid-IR wavelength range, high density
recording, and military communications. The book then discusses the
advantages of crystallization from vapor compared to the
conventional melt growth: lower processing temperatures, the
purification process associated with PVT, and the improved surface
morphology of the grown crystals, as well as the necessary
drawbacks to the PVT process, such as the low and inconsistent
growth rates and the low yield of single crystals. By presenting
in-situ measurements of transport rate, partial pressures and
interferometry, as well as visual observations, the book provides
detailed insights into in the kinetics during the PVT process. This
book is intended for graduate students and professionals in
materials science as well as engineers preparing and developing
optical devices with semiconductors.
Designing machines that can read handwriting like human beings has
been an ambitious goal for more than half a century, driving
talented researchers to explore diverse approaches. Obstacles have
often been encountered that at first appeared insurmountable but
were indeed overcome before long. Yet some open issues remain to be
solved. As an indispensable branch, Chinese handwriting recognition
has been termed as one of the most difficult Pattern Recognition
tasks. Chinese handwriting recognition poses its own unique
challenges, such as huge variations in strokes, diversity of
writing styles, and a large set of confusable categories. With
ever-increasing training data, researchers have pursued elaborate
algorithms to discern characters from different categories and
compensate for the sample variations within the same category. As a
result, Chinese handwriting recognition has evolved substantially
and amazing achievements can be seen. This book introduces integral
algorithms used in Chinese handwriting recognition and the
applications of Chinese handwriting recogniers. The first part of
the book covers both widespread canonical algorithms to a reliable
recognizer and newly developed scalable methods in Chinese
handwriting recognition. The recognition of Chinese handwritten
text is presented systematically, including instructive guidelines
for collecting samples, novel recognition paradigms, distributed
discriminative learning of appearance models and distributed
estimation of contextual models for large categories, in addition
to celebrated methods, e.g. Gradient features, MQDF and HMMs. In
the second part of this book, endeavors are made to create a
friendlier human-machine interface through application of Chinese
handwriting recognition. Four scenarios are exemplified:
grid-assisted input, shortest moving input, handwritten micro-blog,
and instant handwriting messenger. All the while, the book moves
from basic to more complex approaches, also providing a list for
further reading with literature comments.
This book will cover recent advances in genetics and molecular
biology of cerebrovascular diseases, including ischemic stroke,
brain arteriovenous malformation, brain aneurysms, and cavernous
malformation. Developments in diagnostics, imaging and treatment
will also be discussed.Much progress has been made in recent years
in these fields, but not been summarized in one comprehensive text.
This volume fills the gap in the literature by compiling them in
one convenient, handy volume for neuroscience researchers and
medical professionals.
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